b,aug ,2014 to ? 92 1. emitter 2. base 3. collector to-92 plastic-encapsulate transistors 2SC1008 transistor (npn) features z general purpose switching and amplification maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 8 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =2v, i c =50ma 40 400 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 0.4 v base-emitter saturation voltage v be (sat) i c =500ma,i b =50ma 1.1 v collector output capacitance c ob v cb =10v,i c =0, f=1mhz 8 pf transition frequency f t v ce =10v,i c = 50ma 30 mhz classification of h fe rank r o y g range 40-80 70-140 120-240 200-400 symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 8 v i c collector current 700 ma p c collector power dissipation 800 mw r ja thermal resistance from junction to ambient 156 / w t j junction temperature 150 t stg storage temperature -55~+150 tiger electronic co.,ltd
0.1 1 10 1 10 100 1000 200 400 600 800 1000 0.1 1 10 100 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 0.1 1 10 100 0 200 400 600 800 1000 0.1 1 10 100 10 100 1000 0.1 1 10 100 10 100 1000 012345678910 0.00 0.05 0.10 0.15 0.20 0.25 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? 30 t a = 1 0 0 t a = 2 5 collcetor current i c (ma) base-emmiter voltage v be (mv) i c v be common emitter v ce =2v collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 700 700 700 700 ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 i c v besat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? t a =100 t a =25 =10 dc current gain h fe collector current i c (ma) common emitter v ce =2v t a =25 t a =100 i c h fe ?? typical characterisitics 2SC1008 1ma 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b =100ua collector current i c (a) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic b,aug ,2014
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